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IS62LV12816L - 128K x 16 CMOS STATIC RAM

Download the IS62LV12816L datasheet PDF. This datasheet also covers the IS62LV12816L-100B variant, as both devices belong to the same 128k x 16 cmos static ram family and are provided as variant models within a single manufacturer datasheet.

Description

RAM organized as 131,072 words by 16 bits.

using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 70, 100, and 120 ns.
  • CMOS low power operation.
  • 120 mW (typical) operating.
  • 6 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 3V ± 10% VCC power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Available in the 44-pin TSOP (Type II) and 48-pin mini B.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62LV12816L-100B_IntegratedSiliconSolutionInc.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62LV12816L IS62LV12816L 128K x 16 CMOS STATIC RAM ISSISSII®® ADVANCE INFORMATION AUGUST 1998 FEATURES • High-speed access time: 70, 100, and 120 ns • CMOS low power operation – 120 mW (typical) operating – 6 µW (typical) CMOS standby • TTL compatible interface levels • Single 3V ± 10% VCC power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP (Type II) and 48-pin mini BGA FUNCTIONAL BLOCK DIAGRAM 1 DESCRIPTION 2The ISSI IS62LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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