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IS62LV12816LL - ULTRA LOW POWER CMOS STATIC RAM

General Description

2.097,152-bit static RAMs organized as 131,072 words by 16 bits.

They are fabricated using 1+51's high-performance CMOS technology.

Key Features

  • • High-speed access times: 55, 70, 100 ns • CMOS low power operation -- 120 mW (typical) operating -- 6 µW (typical) CMOS standby • TTL compatible interface levels • Single 2.7V-3.6V Vcc power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP-2 and 48-pin 6.
  • 8mm TF-BGA.

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Datasheet Details

Part number IS62LV12816LL
Manufacturer Integrated Circuit Solution
File Size 499.93 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS62LV12816LL Datasheet

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www.DataSheet4U.com IS62LV12816L IS62LV12816L IS62LV12816LL IS62LV12816LL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access times: 55, 70, 100 ns • CMOS low power operation -- 120 mW (typical) operating -- 6 µW (typical) CMOS standby • TTL compatible interface levels • Single 2.7V-3.6V Vcc power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP-2 and 48-pin 6*8mm TF-BGA DESCRIPTION The 1+51 IS62LV12816L and IS62LV12816LL are high-speed, 2.097,152-bit static RAMs organized as 131,072 words by 16 bits. They are fabricated using 1+51's high-performance CMOS technology.