IS62LV12816L Datasheet | ISSI

FEATURES - High-speed access time: 70, 100, and 120 ns - CMOS low power operation - 120 m W (typical) operating - 6 µW (typical) CMOS standby - TTL patible interface levels - Single 3V ± 10% VCC power supply - Fully static operation: no clock or refresh required - Three state outputs - Data control for upper and lower bytes - Industrial temperature available - Available in the 44-pin TSOP (Type II) and 48-pin mini BGA FUNCTIONAL BLOCK DIAGRAM DESCRIPTION 2The ISSI IS62LV12816L is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation...