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IS62LV12816BLL

Manufacturer: ISSI (now Infineon)

IS62LV12816BLL datasheet by ISSI (now Infineon).

IS62LV12816BLL datasheet preview

IS62LV12816BLL Datasheet Details

Part number IS62LV12816BLL
Datasheet IS62LV12816BLL_ISSI.pdf
File Size 120.44 KB
Manufacturer ISSI (now Infineon)
Description ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL page 2 IS62LV12816BLL page 3

IS62LV12816BLL Overview

® FEBRUARY 2001 The ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

IS62LV12816BLL Key Features

  • High-speed access time: 55, 70, 100 ns
  • CMOS low power operation
  • 120 mW (typical) operating
  • 6 µW (typical) CMOS standby
  • TTL patible interface levels
  • Single 2.7V-3.45V VCC power supply
  • Fully static operation: no clock or refresh required
  • Three state outputs
  • Data control for upper and lower bytes
  • Industrial temperature available

IS62LV12816L from other manufacturers

View IS62LV12816L datasheet index

Brand Logo Part Number Description Other Manufacturers
Integrated Circuit Solution Logo IS62LV12816L ULTRA LOW POWER CMOS STATIC RAM Integrated Circuit Solution
Integrated Circuit Solution Logo IS62LV12816LL ULTRA LOW POWER CMOS STATIC RAM Integrated Circuit Solution
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

View all ISSI (now Infineon) datasheets

Part Number Description
IS62LV12816ALL 128K X 16 CMOS Static RAM
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IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS62C256 32K x 8 LOW POWER CMOS STATIC RAM
IS62C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM
IS62C25616EL ULTRA LOW POWER CMOS STATIC RAM
IS62C5128BL 512K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C5128EL ULTRA LOW POWER CMOS STATIC RAM
IS62WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM

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