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IS62LV12816BLL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits.

It is fabricated using ISSI 's high-performance CMOS technology.

Key Features

  • High-speed access time: 55, 70, 100 ns.
  • CMOS low power operation.
  • 120 mW (typical) operating.
  • 6 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single 2.7V-3.45V VCC power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Available in the 44-pin TSOP (Type II) and 48-pin mini BGA.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62LV12816ALL 128K X 16 CMOS Static RAM
IS62LV12816L 128K x 16 CMOS STATIC RAM
IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM
IS62C1024AL 128K x 8 LOW POWER CMOS STATIC RAM
IS62C256 32K x 8 LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com IS62LV12816BLL 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEATURES • High-speed access time: 55, 70, 100 ns • CMOS low power operation – 120 mW (typical) operating – 6 µW (typical) CMOS standby • TTL compatible interface levels • Single 2.7V-3.45V VCC power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Available in the 44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm) ISSI DESCRIPTION ® FEBRUARY 2001 The ISSI IS62LV12816BLL is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI 's high-performance CMOS technology.