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IS62WV25616DALL - ULTRA LOW POWER CMOS STATIC SRAM

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General Description

The ISSI IS62WV25616DALL and IS62/65WV25616DBLL are high-speed, low power, 4M bit SRAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CS1 is HIGH (deselected) or when CS2 is low (deselcted) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Overview

IS62WV25616DALL/DBLL, IS65WV25616DBLL 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM MARCH.

Key Features

  • High-speed access time: 35, 45, 55 ns.
  • CMOS low power operation 30 mW (typical) operating 6 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V Vdd (IS62WV25616DALL) 2.3V--3.6V Vdd (IS62/65WV25616DBLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free a.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS62WV25616ALL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS62WV25616BLL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution

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