IS62WV25616BLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS62WV25616BLL, a member of the IS62WV25616ALL ULTRA LOW POWER CMOS STATIC RAM family.

Product Overview

Integrated Silicon Solution

Part number	IS62WV25616BLL
Manufacturer	Integrated Silicon Solution
File Size	388.25 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62WV25616BLL Datasheet
Additional preview pages of the IS62WV25616BLL datasheet.

The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

High-speed access time: 55ns, 70ns.
CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
TTL compatible interface levels.
Single power supply 1.65V--2.2V VDD (IS62WV25616ALL) 2.5V--3.6V VDD (IS62WV25616BLL).
Fully static operation: no clock or refresh required.
Three state outputs.
Data control for upper and lower bytes.
Industrial temperature available.
Lead-free available.

Other Datasheets by Integrated Silicon Solution

Published: Feb 22, 2009 |