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IS62WV25616ALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 55ns, 70ns.
  • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby.
  • TTL compatible interface levels.
  • Single power supply 1.65V--2.2V VDD (IS62WV25616ALL) 2.5V--3.6V VDD (IS62WV25616BLL).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial temperature available.
  • Lead-free available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV25616ALL IS62WV25616BLL www.DataSheet4U.com 256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM ISSI MAY 2005 ® FEATURES • High-speed access time: 55ns, 70ns • CMOS low power operation 36 mW (typical) operating 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply 1.65V--2.2V VDD (IS62WV25616ALL) 2.5V--3.6V VDD (IS62WV25616BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62WV25616ALL/IS62WV25616BLL are highspeed, low power, 4M bit SRAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.