IS62WV51216GALL
FEATURES
- High-speed access time: 45ns, 55ns
- CMOS low power operation
- Operating Current: 35m A (max.)
- CMOS standby Current: 5.5u A (typ.)
- TTL patible interface levels
- Single power supply
- 1.65V-2.2V VDD (IS62/65WV51216GALL)
- 2.2V-3.6V VDD (IS62/65WV51216GBLL)
- Three state outputs
- mercial, Industrial and Automotive temperature support
- Lead-free available
DESCRIPTION
The ISSI IS62/65WV51216GALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE#) controls both writing and...
