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IS62WV51216GALL - ULTRA LOW POWER CMOS STATIC RAM

General Description

The ISSI IS62/65WV51216GALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 35mA (max. ).
  • CMOS standby Current: 5.5uA (typ. ).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV51216GALL).
  • 2.2V-3.6V VDD (IS62/65WV51216GBLL).
  • Three state outputs.
  • Commercial, Industrial and Automotive temperature support.
  • Lead-free available.

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📁 Similar Datasheet

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS62WV51216GBLL ULTRA LOW POWER CMOS STATIC RAM
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IS62WV5128DBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS62WV51216GALL/BLL IS65WV51216GALL/BLL 512Kx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2021 KEY FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.) • TTL compatible interface levels • Single power supply –1.65V-2.2V VDD (IS62/65WV51216GALL) – 2.2V-3.6V VDD (IS62/65WV51216GBLL) • Three state outputs • Commercial, Industrial and Automotive temperature support • Lead-free available DESCRIPTION The ISSI IS62/65WV51216GALL/BLL are high-speed, low power, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.