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IS64WV25616EDBLL Datasheet 256k X 16 High Speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields highperformance and low power consumption devices.

Key Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 2.4V to 3.6V (10 ns).
  • Vdd 3.3V ± 10% (8 ns).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and E.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS64WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25632BLL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV2568FALL 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS64WV2568FBLL 256K x 8 HIGH SPEED AYNCHRONOUS CMOS STATIC RAM
IS64WV204816ALL 2Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV204816BLL 2Mx16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV20488BLL 2M x 8 HIGH-SPEED CMOS STATIC RAM

IS64WV25616EDBLL Distributor