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IS64WV25616LEBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS64WV25616LEBLL, a member of the IS61WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS61/64WV25616LEBLL are high-speed, low power, 4M bit Latched static RAMs organized as 256K words by 16 bits.

It is fabricated using ISSI's highperformance CMOS technology and implemented ECC function to improve reliability.

Features

  • High-speed access time: 12ns, 15ns.
  • Single power supply.
  • 2.4V-3.6V VDD.
  • Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ. ).
  • Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection.
  • ALE# pin to latch Address & CS# signals.
  • Industrial and Automotive temperature support.
  • Lead-free available.

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Datasheet preview – IS64WV25616LEBLL

Datasheet Details

Part number IS64WV25616LEBLL
Manufacturer ISSI
File Size 795.37 KB
Description 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS64WV25616LEBLL Datasheet
Additional preview pages of the IS64WV25616LEBLL datasheet.

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Full PDF Text Transcription

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IS61WV25616LEBLL IS64WV25616LEBLL 256Kx16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM with LATCHED ADDRESS & ECC JULY 2019 KEY FEATURES  High-speed access time: 12ns, 15ns  Single power supply – 2.4V-3.6V VDD  Ultra Low Standby Current with ZZ# pin - IZZ = 30uA (typ.)  Error Detection and Correction with optional ERR1/ERR2 output pin: - ERR1 pin indicates 1-bit error detection and correction. - ERR2 pin indicates multi-bit error detection  ALE# pin to latch Address & CS# signals.  Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM A0 – A17 LATCH DECODER ALE# CS# LATCH OE# WE# UB# LB# ZZ# CONTROL CIRCUIT .
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