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IS64WV25616EDBLL - 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS64WV25616EDBLL datasheet PDF. This datasheet also covers the IS61WV25616EDBLL variant, as both devices belong to the same 256k x 16 high speed asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

by 16 bits.

CMOS technology.

Key Features

  • High-speed access time: 8, 10 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 2.4V to 3.6V (10 ns).
  • Vdd 3.3V ± 10% (8 ns).
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support.
  • Lead-free available.
  • Error Detection and E.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV25616EDBLL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS64WV12816DBLL 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV12816DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64WV51216BLL 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AL 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS64C25616AS 256K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS64WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25632BLL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS64WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61WV25616EDBLL IS64WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC JULY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply — Vdd 2.4V to 3.6V (10 ns) — Vdd 3.3V ± 10% (8 ns) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS61/64WV25616EDBLL is a high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.