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IS65WV102416FBLL - ULTRA LOW POWER CMOS STATIC RAM

This page provides the datasheet information for the IS65WV102416FBLL, a member of the IS62WV102416FALL ULTRA LOW POWER CMOS STATIC RAM family.

Datasheet Summary

Description

The ISSI IS62/65WV102416FALL/FBLL are high-speed, low power, 16M bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating Current: 35mA (max. ).
  • CMOS standby Current: 5.5uA (typ. ).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V-2.2V VDD (IS62/65WV102416FALL).
  • 2.2V-3.6V VDD (IS62/65WV102416FBLL).
  • Three state outputs.
  • Commercial, Industrial and Automotive temperature support.
  • Lead-free available.

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Datasheet preview – IS65WV102416FBLL

Datasheet Details

Part number IS65WV102416FBLL
Manufacturer ISSI
File Size 591.76 KB
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet download datasheet IS65WV102416FBLL Datasheet
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IS62WV102416FALL/BLL IS65WV102416FALL/BLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBURARY 2020 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating Current: 35mA (max.) – CMOS standby Current: 5.5uA (typ.)  TTL compatible interface levels  Single power supply –1.65V-2.2V VDD (IS62/65WV102416FALL) – 2.2V-3.6V VDD (IS62/65WV102416FBLL)  Three state outputs  Commercial, Industrial and Automotive temperature support  Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65WV102416FALL/FBLL are high-speed, low power, 16M bit static RAMs organized as 1024K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.
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