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IS65WV102416BLL - 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM

Download the IS65WV102416BLL datasheet PDF. This datasheet also covers the IS62WV102416ALL variant, as both devices belong to the same 1m x 16 high-speed low power asynchronous cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

Key Features

  • High-speed access times: 25, 35 ns.
  • High-performance, low-power CMOS process.
  • Multiple center power and ground pins for greater noise immunity.
  • Easy memory expansion with CS1 and OE options.
  • CS1 power-down.
  • Fully static operation: no clock or refresh required.
  • TTL compatible inputs and outputs.
  • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) sp.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV102416ALL-IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM ISSI
IS65WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM ISSI
IS65WV102416EALL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS65WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM ISSI
IS65WV102416FALL ULTRA LOW POWER CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65C256AL 32K x 8 LOW POWER CMOS STATIC RAM
IS65C51216AL ULTRA LOW POWER CMOS STATIC RAM
IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM
IS65LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM
IS61C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62WV102416ALL IS62WV102416BLL IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) speed = 25ns for VDD 2.4V to 3.