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IS65WV102416EALL - ULTRA LOW POWER CMOS STATIC RAM

Download the IS65WV102416EALL datasheet PDF. This datasheet also covers the IS62WV102416EALL variant, as both devices belong to the same ultra low power cmos static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

IS65WV102416EALL/BLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits.

technology.

Key Features

  • High-speed access time: 45ns, 55ns.
  • CMOS low power operation.
  • Operating (typical): - 10.8mW (1.8V), 18mW (3.0V).
  • CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V).
  • TTL compatible interface levels.
  • Single power supply.
  • 1.65V.
  • 1.98V Vdd (62/65WV102416EALL).
  • 2.2V--3.6V Vdd (62/65WV102416EBLL).
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperature support BLOCK.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS62WV102416EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS65WV102416BLL 1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM Integrated Silicon Solution
IS65C256AL 32K x 8 LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS65C51216AL ULTRA LOW POWER CMOS STATIC RAM Integrated Silicon Solution
IS65C6416AL 64K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Silicon Solution
IS65LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS65WV102416EBLL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416DALL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416DBLL ULTRA LOW POWER & LOW POWER CMOS STATIC RAM
IS65WV102416FALL ULTRA LOW POWER CMOS STATIC RAM
IS65WV102416FBLL ULTRA LOW POWER CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS62/65WV102416EALL IS62/65WV102416EBLL 1Mx16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM FEBRUARY 2016 KEY FEATURES  High-speed access time: 45ns, 55ns  CMOS low power operation – Operating (typical): - 10.8mW (1.8V), 18mW (3.0V) – CMOS Standby (typical): - 48 µW (1.8V), 90 µW (3.0V)  TTL compatible interface levels  Single power supply –1.65V—1.98V Vdd (62/65WV102416EALL) – 2.2V--3.6V Vdd (62/65WV102416EBLL)  Data control for upper and lower bytes  Industrial and Automotive temperature support BLOCK DIAGRAM DESCRIPTION The IS62WV102416EALL/BLL and IS65WV102416EALL/BLL are Low Power, 16M bit static RAMs organized as 1024K words by 16bits. It is fabricated using 's high-performance CMOS technology.