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IS66WVE1M16EALL Datasheet 16Mb Async/Page PSRAM

Manufacturer: ISSI (now Infineon)

Overview: IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WVE1M16TALL/BLL/CLL are integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core.

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Key Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 60ns, 70ns.
  • Intrapage Read access : 25ns.
  • Low Power Consumption.
  • Asynchronous Opera.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS66WVE1M16EBLL 16Mb Async/Page PSRAM
IS66WVE1M16ECLL 16Mb Async/Page PSRAM
IS66WVE1M16ALL 1.8V Core Async/Page PSRAM
IS66WVE1M16BLL 3.0V Core Async/Page PSRAM
IS66WVE1M16TALL 16Mb Async/Page PSRAM
IS66WVE1M16TBLL 16Mb Async/Page PSRAM
IS66WVE1M16TCLL 16Mb Async/Page PSRAM
IS66WVE2M16ALL 1.8V Core Async/Page PSRAM
IS66WVE2M16BLL 3.0V Core Async/Page PSRAM
IS66WVE2M16DALL 1.8V Core Async/Page PSRAM