IS66WVE51216TBLL Description
PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 8Mb DRAM core device is organized as 512K x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings.
IS66WVE51216TBLL Key Features
- Asynchronous and page mode interface
- Dual voltage rails for optional performance
- ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
- BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
- CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
- Page mode read access
- Interpage Read access : 60ns, 70ns
- Intrapage Read access : 25ns
- Low Power Consumption
- Asynchronous Operation < 30 mA