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IS66WVE51216TBLL - 8Mb Async/Page PSRAM

Download the IS66WVE51216TBLL datasheet PDF. This datasheet also covers the IS66WVE51216EALL variant, as both devices belong to the same 8mb async/page psram family and are provided as variant models within a single manufacturer datasheet.

Description

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

The 8Mb DRAM core device is organized as 512K x 16 bits.

Features

  • Asynchronous and page mode interface.
  • Dual voltage rails for optional performance.
  • ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V.
  • BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V.
  • CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V.
  • Page mode read access.
  • Interpage Read access : 60ns, 70ns.
  • Intrapage Read access : 25ns.
  • Low Power Consumption.
  • Asynchronous Operation < 30 mA.
  • Intrapage Read < 23 mA.
  • Standby < 150 uA (max. ).
  • Deep power-down (DPD).
  • ALL/CLL: < 3µA (Typ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS66WVE51216EALL-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS66WV51216DALL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS66WV51216DBLL 8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM Integrated Silicon Solution
IS660 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM
IS661 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM
IS662 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR ISOCOM

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS66WVE51216TALL 8Mb Async/Page PSRAM
IS66WVE51216TCLL 8Mb Async/Page PSRAM
IS66WVE51216EALL 8Mb Async/Page PSRAM
IS66WVE51216EBLL 8Mb Async/Page PSRAM
IS66WVE51216ECLL 8Mb Async/Page PSRAM

Full PDF Text Transcription

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IS66/IS67WVE51216EALL/EBLL/ECLL IS67/IS67WVE51216TALL/TBLL/TCLL 8Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE51216EALL/BLL/CLL and IS66/67WVE51216TALL/BLL/CLL are integrated memory device containing 8Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 512K words by 16 bits. The device includes several power saving modes : Partial Array Refresh mode where data is retained in a portion of the array and Deep Power Down mode. Both these modes reduce standby current drain. The die has separate power rails, VDDQ and VSSQ for the I/O to be run from a separate power supply from the device core. Features  Asynchronous and page mode interface  Dual voltage rails for optional performance  ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V  BLL: VDD 2.7V~3.
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