30N50Q
30N50Q is Power MOSFETs manufactured by IXYS.
Features
- Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
- Low drain to tab capacitance(<50p F)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Fast intrinsic Rectifier
Symbol
Test Conditions
VDSS V
GS(th)
IGSS IDSS
RDS(on)
VGS = 0 V, ID = 1m A
V = V , I = 4m A DS GS D
VGS = ±20 VDC, VDS = 0
VDS = VDSS VGS = 0 V
VGS = 10 V, ID = IT Notes 1, 2
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.
500 V
2 4V
±100 n A
TJ = 25°C TJ = 125°C
30N50 32N50
100 m A 1 m A
0.16 W 0.15 W
Applications
DC-DC converters
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- AC motor control
Advantages
- Easy assembly
- Space savings
- High power density
IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights...
