Overview: HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt
Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80 A RDS(on) = 12.5 mΩ
trr ≤ 200 ns Symbol VDSS VDGR VGS VGSM I
D25
I
L(RMS)
I
DM
IAR EAR EAS dv/dt
P D
T J
TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C Lead current limit T C = 25°C, pulse width limited by T JM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω T C = 25°C 1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247 TO-268 Maximum Ratings 100 100 ±20 ±30 80 75 320 80 50 2.5
5 V V V V A A A A mJ J V/ns 300 W -55 to +150 °C 150 °C -55 to +150 °C 300 °C 1.13/10 Nm/lb.in. 6 g 4 g Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 1 mA 100 VDS = VGS, ID = 4 mA 2.0 VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % V 4.0 V
±100 nA
50 µA 1 mA
12.
