80N10 Description
6 g 4 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
80N10 Key Features
- ID25, pulse test
- VDSS, ID = 0.5
- VDSS, ID = 0.5
- Gate 2
- Drain 3
- Source Tab
- Gate 2
- Drain 3
- Source Tab
80N10 is Power MOSFETs manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
VBsemi |
80N10 | N-Channel MOSFET |
6 g 4 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.