80N10 Datasheet | Specifications & PDF Download

SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80

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HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) Single MOSFET Die IXFR 180N10 VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW tr

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VD

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UNISONIC TECHNOLOGIES CO., LTD UTT80N10 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advan

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NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1

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80N10-VB 80N10-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate ch

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VG

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data IXFH 80N10Q

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NDBA180N10B Power MOSFET 100V, 2.8mΩ, 180A, N-Channel www.onsemi.com Features • Ultra Low On-Resistance • Low Gate Charge • High Speed Switching • 1

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Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica

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IPD180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF80N10F7 \ ·FEATURES ·Extremely low gate charge ·Ultra low on-resistance ·Low gate input re

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MOSFET - Power, Single N-Channel, m8FL 100 V, 72 mW, 16 A NTTFS080N10G Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Condu

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TAB 23 1 H2PAK-2 D(TAB) G(1) STH180N10F3-2 Datasheet N‑channel 100 V, 3.9 mΩ typ., 180 A STripFET F3 Power MOSFET in H²PAK‑2 package Features Order

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NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Te

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD

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