HiPerFETTM Power MOSFETs N-Channel Enhancement Mod.
JILIN SINO-MICROELECTRONICS
JCS80N10SF - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS.
Unisonic Technologies
UTT80N10 - N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80N10 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advan.
JILIN SINO-MICROELECTRONICS
JCS80N10F - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS.
ON Semiconductor
NTTFS080N10G - N-Channel Power MOSFET
MOSFET - Power, Single N-Channel, m8FL 100 V, 72 mW, 16 A NTTFS080N10G Features • Wide SOA for Linear Mode Operation • Low RDS(on) to Minimize Condu.
JILIN SINO
MC80N10B - N-CHANNEL MOSFET
MC80N10B N N-CHANNEL MOSFET MAIN CHARACTERISTICS Package ID VDSS R(-d@sVogns=-1m0aVx） Qg-typ LED 60.0A 100V 9.2mΩ 39.7nC APPLICATIONS .
IXYS
80N10 - Power MOSFETs
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80 .
Infineon Technologies
SPI80N10L - OptiMOS Power-Transistor
www.DataSheet4U.com Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID P-TO262-3-1 P-T.
SI-TECH
S80N10R - N-Channel MOSFET
SI-TECH SEMICONDUCTOR CO.,LTD Features VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V 100% Avalanche Tested 100% Rg Tested Lead-Free (RoHS Complia.
JILIN SINO-MICROELECTRONICS
JCS80N10CF - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS.
JILIN SINO-MICROELECTRONICS
JCS80N10FF - N-CHANNEL MOSFET
N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS.
Analog Power
AM180N10-04M5P - N-Channel MOSFET
Analog Power N-Channel 100-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applica.
INCHANGE
IPP180N10N3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP180N10N3，IIPP180N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤18mΩ ·Enhance.
ETC
IXFN180N10 - Power MOSFET
HiPerFETTM Power MOSFET Single MOSFET Die Preliminary data sheet IXFN 180N10 VDSS ID25 RDS(on) = 100 V = 180 A = 8 mΩ trr ≤ 250 ns Symbol Test Co.
SemiHow
HRLO180N10K - N-Channel Trench MOSFET
HRLO180N10K Jan 2016 HRLO180N10K 100V N-Channel Trench MOSFET Features High Dense Cell Design Reliable and Rugged Advanced Trench Process Tec.
IXYS Corporation
IXFH80N10 - Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VD.
IXYS Corporation
IXFE180N10 - Power MOSFET
www.DataSheet4U.com HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR E.
IXYS Corporation
IXFK180N10 - Power MOSFETs
www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD.
Infineon Technologies
SPI80N10L - Power-Transistor
www.DataSheet4U.com Preliminary data SPI80N10L SPP80N10L,SPB80N10L SIPMOS Power-Transistor Feature Product Summary VDS RDS(on) ID P-TO262-3-1 P-T.
STMicroelectronics
STD80N10F7 - N-CHANNEL POWER MOSFET
STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ 2 Power MOSFETs in DPAK, TO-220FP, H PAK-.
Infineon Technologies
IPA180N10N3G - Power-Transistor
IPA180N10N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistanc.