80N10 Datasheet | Specifications & PDF Download

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VDSS = 100 V ID25 = 80

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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UNISONIC TECHNOLOGIES CO., LTD UTT80N10H 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N10H is a N-channel Power MOSFET, it uses UTC’s a

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UNISONIC TECHNOLOGIES CO., LTD UTT80N10 80A, 100V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advan

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N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS

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80N10-VB 80N10-VB Datasheet N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS

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NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Te

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HRLO180N10K Jan 2016 HRLO180N10K 100V N-Channel Trench MOSFET Features ‰ High Dense Cell Design ‰ Reliable and Rugged ‰ Advanced Trench Process Tec

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www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary data sheet IXFH 80N10 IXFT 80N10 VD

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www.DataSheet4U.com HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD

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TrenchT2TM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFA180N10T2 IXFP180N10T2 Symbol VDSS VDGR VG

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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TrenchMVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTA80N10T IXTP80N10T VDSS ID25 RDS(on) = = ≤ 100V 80A 14m

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Preliminary Technical Information TrenchMVTM Power MOSFET IXTA80N10T7 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 80 1

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PreliminaryTechnical Information TrenchMVTM IXTA180N10T7 Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 100 180

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N N-CHANNEL MOSFET R JCS80N10F MAIN CHARACTERISTICS ID 80 A VDSS 100 V Rdson（@Vgs=10V） 12 mΩ Qg 115nC Package z DC/DC z D APPLICATIONS

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HRD180N10K_HRU180N10K HRD180N10K / HRU180N10K 100V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology 

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MCAC80N10Y Features • Advanced Trench Cell Design • High Speed Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Ha

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263 packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and curr

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