80N10 Overview
6 g 4 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
80N10 Key Features
- ID25, pulse test
- VDSS, ID = 0.5
- VDSS, ID = 0.5
- Gate 2
- Drain 3
- Source Tab
- Gate 2
- Drain 3
- Source Tab
Power MOSFETs
| Part number | 80N10 |
|---|---|
| Manufacturer | IXYS (now Littelfuse) |
| File Size | 88.95 KB |
| Description | Power MOSFETs |
| Datasheet | 80N10-IXYS.pdf |
|
|
|
6 g 4 g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
80N10 | N-Channel MOSFET | VBsemi |
See all IXYS (now Littelfuse) datasheets
| Part Number | Description |
|---|---|
| 80N60B | High Current IGBT |