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G080N10 - N-Channel Enhancement Mode Power MOSFET

Download the G080N10 datasheet PDF. This datasheet also covers the G080N10T variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (G080N10T-GOFORD.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number G080N10
Manufacturer GOFORD
File Size 0.98 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G080N10 Datasheet

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Other Datasheets by GOFORD

Part Number Description
G080N10T N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.