G080N10 Overview
The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
G080N10 Details
| Part number | G080N10 |
|---|---|
| Datasheet | G080N10 G080N10T Datasheet (PDF) |
| File Size | 0.98 MB |
| Manufacturer | GOFORD |
| Description | N-Channel Enhancement Mode Power MOSFET |
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