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G080N10 Datasheet PDF

GOFORD G080N10

The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
Part No. G080N10
Datasheet G080N10 Download
Manufacturer GOFORD
Description N-Channel Enhancement Mode Power MOSFET
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G080N10 datasheet page 1 preview

DESCRIPTION

It can be used in a wide variety of applications.

GENERAL FEATURES

l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-220 Ordering Information Device G080N10T Package TO-220 Marking G080N10 Packaging 50pcs/Tube

ABSOLUTE MAXIMUM RATINGS

TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Power Dissipation Single pulse avalanche energy Operating Junction and Storage Temperature Range (note1) (note2) VDS ID IDM VGS PD EAS TJ, Tstg 100 V 180 A 720 A ±20 V 370 W 361 mJ -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient Maximum Junction-to-Case RthJA RthJC 62 ºC/W 0.34 ºC/W TEL:0755-29961263 FAX:0755-29961466(A1799-V1.0) G080N10T Specifications TJ = 25ºC, unless otherwise noted Pa...
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