G080N10 Description
The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.
- Part: G080N10
- Manufacturer: GOFORD
- Size: 0.98 MB
Related GOFORD Datasheets
| Part Number | Description |
|---|---|
| G080N10T | N-Channel Enhancement Mode Power MOSFET |