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G080N10T - N-Channel Enhancement Mode Power MOSFET

General Description

excellent RDS(ON) , low gate charge.

It can be used in a wide variety of applications.

Key Features

  • l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.5mΩ < 8mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram.

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Datasheet Details

Part number G080N10T
Manufacturer GOFORD
File Size 0.98 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet G080N10T Datasheet

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Other Datasheets by GOFORD

Part Number Description
G080N10 N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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G080N10T N-Channel Enhancement Mode Power MOSFET Description The G080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 180A < 7.