SPN180N10 Description
The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN180N10 Key Features
- 100V/184A, RDS(ON)=3.7mΩ@VGS=10V
- High density cell design or extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current
- TO-220-3L/TO-220F-3L/TO-263-2L/PPAK5x6