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SPN180N10 Datasheet N-Channel Enhancement Mode MOSFET

Manufacturer: SYNC POWER

Overview: SPN180N10 N-Channel Enhancement Mode MOSFET.

Datasheet Details

Part number SPN180N10
Manufacturer SYNC POWER
File Size 333.02 KB
Description N-Channel Enhancement Mode MOSFET
Download SPN180N10 Download (PDF)

General Description

The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.

Key Features

  • 100V/184A, RDS(ON)=3.7mΩ@VGS=10V.
  • High density cell design or extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-263-2L/PPAK5x6 package design PIN.

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