SPN180N10 Datasheet | SYNC POWER

DESCRIPTION The SPN180N10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS - AC/DC Synchronous Rectifier - Load Switch - UPS - Power Tool - Motor Control FEATURES - 100V/184A, RDS(ON)=3.7mΩ@VGS=10V - High density cell design or extremely low RDS(ON) - Exceptional on-resistance and maximum DC current capability - TO-220-3L/TO-220F-3L/TO-263-2L/PPAK5x6 package design PIN CONFIGURATION TO-220-3L TO-220F-3L TO-263-2L PPAK5x6 PART MARKING 2024/12/18 Ver 2.1 Page 1 N-Channel Enhancement Mode MOSFET TO-220-3L/TO-220F-3L/TO-263-2L PIN DESCRIPTION Pin Symbol PPAK5x6-8L Pin 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Description Gate Drain Source Description Source Source Source Gate Drain Drain Drain Drain ORDERING INFORMATION Part Number Package SPN180N10T220TGB TO-220-3L SPN180N10T220FTGB TO-220F-3L SPN180N10T262RGB TO-263-2L SPN180N10DN8RGB PPAK5x6 ※ SPN180N10T220TGB : Tube ;...