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HiPerFETTM Power MOSFETs ISOPLUS247TM
(Electrically Isolated Back Surface)
Single MOSFET Die
IXFR 180N10
VDSS = 100 V ID25 = 165 A RDS(on) = 8 mW
trr £ 250 ns
Preliminary data
Symbol
VDSS V
DGR
VGS V
GSM
I
D25
ID(RMS) I
DM
IAR
EAR EAS dv/dt
PD TJ TJM Tstg TL VISOL Weight
Symbol
V DSS
VGS(th) IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous Transient
T C
= 25°C (MOSFET chip capability)
External lead (current limit)
T C
= 25°C, Note 1
TC = 25°C
TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS t = 1 min
Maximum Ratings
100
V
100
V
±20
V
±30
V
165
A
76
A
720
A
180
A
60
mJ
3
J
5 V/ns
400
W
-55 ...
180N10 Datasheet
