180N10B - Power MOSFET

onsemi

Key Features

Ultra Low On-Resistance.
Low Gate Charge.
High Speed Switching.
100% Avalanche Test.
Pb-Free and RoHS compliance Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C Junction Temperature VDSS VGSS ID IDL IDP PD Tj 100 V 20 V 180 A 100 A 600 A 2.1 200 W.

180N10B power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	180N10B
Manufacturer	onsemi
File Size	634.44 KB
Description	Power MOSFET
Datasheet	180N10B Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
180N10	Power MOSFETs	IXYS
180N10F3	N-channel Power MOSFET	STMicroelectronics
180N10N	Power Transistor	Infineon
180N55F3	N-Channel MOSFET	STMicroelectronics
180NQ	SCHOTTKY RECTIFIER	International Rectifier

Other Datasheets by onsemi

Part Number	Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NDPL180N10B Power MOSFET 100V, 3.0mΩ, 180A, N-Channel Features  Ultra Low On-Resistance  Low Gate Charge  High Speed Switching  100% Avalanche Test  Pb-Free and RoHS compliance Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C Junction Temperature VDSS VGSS ID IDL IDP PD Tj 100 V 20 V 180 A 100 A 600 A 2.