80N60B - High Current IGBT

Datasheet Details

! International standard packages ! Very high current, fast switching IGBT ! Low V CE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Test Conditions IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V GE VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 4 8V TJ = 25°C T J = 125°C 200 µA 2 mA ±200 nA 2.5 V.

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Published: Dec 27, 2015 |