! International standard packages ! Very high current, fast switching IGBT ! Low V
CE(sat)
- for minimum on-state conduction
losses ! MOS Gate turn-on
- drive simplicity
Test Conditions
IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V
GE
VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max. 600 V
4 8V
TJ = 25°C
T J
=
125°C
200 µA 2 mA
±200 nA
2.5 V.