80N60B Datasheet High Current IGBT

Manufacturer: IXYS (now Littelfuse)

80N60B high current igbt by IXYS (now Littelfuse) - Datasheet Preview

Datasheet Details

Part number	80N60B
Manufacturer	IXYS (now Littelfuse)
File Size	42.75 KB
Description	High Current IGBT
Download	80N60B Download (PDF)

Overview

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 600 V 600 V ±20 V ±30 V T C = 25°C TC = 90°C T C = 90°C TC = 25°C, 1 ms (silicon chip capability) (silicon chip capability) (silicon chip capability) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load VGE = 15 V, VCE = 0.6 VCES, TJ = 125°C R G = 5 Ω, non-repetitive TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 160 80 75 300 ICM = 160 @ 0.8 V CES 10 A A A A A µs 500 W -55 ...

+150 150 -55 ...

+150 °C °C °C 300 °C 0.4/6 Nm/lb.in.

Key Features

! International standard packages ! Very high current, fast switching IGBT ! Low V CE(sat) - for minimum on-state conduction losses ! MOS Gate turn-on - drive simplicity Test Conditions IC = 500 µA, VGE = 0 V IC = 8 mA, VCE = VGE VCE = VCES V =0V GE VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 V 4 8V TJ = 25°C T J = 125°C 200 µA 2 mA ±200 nA 2.5 V.

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