Download the CPC3714C datasheet PDF.
This datasheet also covers the CPC3714 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The CPC3714 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
Full PDF Text Transcription for CPC3714C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CPC3714C. For precise diagrams, and layout, please refer to the original PDF.
T-89 Features • Offers Low RDS(on) at Cold Temperatures • RDS(on) 14 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350V • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply Package Pinout D G D S (SOT-89) CPC3714 350V N-Channel Depletion-Mode FET Description The CPC3714 is an N-channel, depletion-mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
CPC3714C Datasheet
