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IXYS

CPC3714C Datasheet Preview

CPC3714C Datasheet

N-Channel MOSFET

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INTEGRATED CIRCUITS DIVISION
V(BR)DSX /
V(BR)DGX
350VP
RDS(on)
(max)
14
IDSS (min)
240mA
Package
SOT-89
Features
Offers Low RDS(on) at Cold Temperatures
RDS(on) 14max. at 25ºC
High Input Impedance
High Breakdown Voltage: 350V
Low VGS(off) Voltage: -1.6 to -3.9V
Small Package Size: SOT-89
Applications
Ignition Modules
Normally-On Switches
Solid State Relays
Converters
Telecommunications
Power Supply
Package Pinout
D
G
D
S
(SOT-89)
CPC3714
350V N-Channel
Depletion-Mode FET
Description
The CPC3714 is an N-channel, depletion-mode, field
effect transistor (FET) that utilizes IXYS Integrated
Circuits Division’s proprietary third-generation vertical
DMOS process. The third-generation process realizes
world class, high voltage MOSFET performance
in an economical silicon gate process. Our vertical
DMOS process yields a robust device, with high input
impedance, for use in high power applications. The
CPC3714 is a highly reliable FET device that has
been used extensively in our solid state relays for
industrial and telecommunications applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3714 offers a low, 14maximum, on-state
resistance at 25ºC.
The CPC3714 has a minimum breakdown voltage of
350VP and is available in an SOT-89 package. As with
all MOS devices, the FET structure prevents thermal
runaway and thermal-induced secondary breakdown.
Ordering Information
Part #
CPC3714CTR
Description
N-Channel Depletion Mode FET, SOT-89 Pkg.
Tape and Reel (1000/Reel)
Circuit Symbol
D
G
S
DS-CPC3714-R02
www.ixysic.com
1




IXYS

CPC3714C Datasheet Preview

CPC3714C Datasheet

N-Channel MOSFET

No Preview Available !

INTEGRATED CIRCUITS DIVISION
CPC3714
Absolute Maximum Ratings @ 25 ºC
Parameter
Ratings Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Pulsed Drain Current
Total Package Dissipation 1
350
VP
±15
VP
600
mA
1.4
W
Junction Temperature
150
ºC
Operational Temperature
-55 to +125 ºC
Storage Temperature
-55 to +125 ºC
1 Mounted on FR4 board 1"x1"x0.062"
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Electrical Characteristics @ 25 ºC (Unless Otherwise Noted)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Off Voltage
Change in VGS(off) with Temperatures
Gate Body Leakage Current
Drain-to-Source Leakage Current
Saturated Drain-to-Source Current
Static Drain-to-Source ON-State Resistance
Change in RDS(on) with Temperatures
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Source-Drain Diode Voltage Drop
Thermal Resistance (Junction to Ambient)
Symbol
V(BR)DSX
VGS(off)
dVGS(off)/dT
IGSS
ID(off)
IDSS
RDS(on)
dRDS(on)/dT
GFS
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
VSD
RJA
Conditions
VGS= -5V, ID=100µA
IDS= 5V, ID=1mA
VDS= 5V, ID=1mA
VGS=±15V, VDS=0V
VGS= -5V, VDS=350V
VGS= -5V, VDS=280V, TA=125ºC
VGS= 0V, VDS=15V
VGS= 0V, ID=240mA
VGS= 0V, ID=240mA
ID= 100mA, VDS = 10V
VGS= -5V
VDS= 25V
f= 1MHz
VDD= 25V
ID= 150mA
VGS= 0V to -10V
Rgen= 50
VGS= -5V, ISD= 150mA
-
Min Typ Max Units
350
-
-
VP
-1.6
-
-3.9
V
-
-
4.5 mV/ºC
-
-
100 nA
-
-
1
A
-
-
1
mA
240
-
-
mA
-
-
14
-
-
1.1 %/ºC
225
-
-
m
45 100
-
10
60
pF
2
40
20
10
-
-
ns
20
50
-
0.6 1.8
V
-
90
- ºC/W
Switching Waveform & Test Circuit
0V
INPUT
-10V
10%
VDS
OUTPUT
0V
ton
td(on)
tf
90%
10%
90%
toff
td(off)
tr
90%
10%
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
2
www.ixysic.com
R02


Part Number CPC3714C
Description N-Channel MOSFET
Maker IXYS
PDF Download

CPC3714C Datasheet PDF






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