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CPC3730CTR - N-Channel FET

Download the CPC3730CTR datasheet PDF. This datasheet also covers the CPC3730 variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Low RDS(on) at Cold Temperatures.
  • RDS(on) 35 max. at 25ºC.
  • High Input Impedance.
  • High Breakdown Voltage: 350VP.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Small Package Size: SOT-89.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3730-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3730C N-Channel FET
CPC3730 N-Channel FET
CPC3701 N-Channel MOSFET
CPC3701C N-Channel MOSFET
CPC3701CTR N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140mA Package SOT-89 Features • Low RDS(on) at Cold Temperatures • RDS(on) 35 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350VP • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3730 350V N-Channel Depletion-Mode FET Description The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.