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CPC3730 - N-Channel FET

General Description

The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Low RDS(on) at Cold Temperatures.
  • RDS(on) 35 max. at 25ºC.
  • High Input Impedance.
  • High Breakdown Voltage: 350VP.
  • Low VGS(off) Voltage: -1.6 to -3.9V.
  • Small Package Size: SOT-89.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 350VP RDS(on) (max) 35 IDSS (min) 140mA Package SOT-89 Features • Low RDS(on) at Cold Temperatures • RDS(on) 35 max. at 25ºC • High Input Impedance • High Breakdown Voltage: 350VP • Low VGS(off) Voltage: -1.6 to -3.9V • Small Package Size: SOT-89 Applications • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3730 350V N-Channel Depletion-Mode FET Description The CPC3730 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.