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CPC3730C - N-Channel FET

General Description

The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process.

Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • Depletion mode device offers low RDS(ON) at cold temperatures.
  • Low on resistance 30 ohms max. at 25ºC.
  • High input impedance.
  • High breakdown voltage 350V.
  • Low VGS(off) voltage -1.6 to -3.9V.
  • Small package size SOT-89.

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Datasheet Details

Part number CPC3730C
Manufacturer Clare
File Size 323.82 KB
Description N-Channel FET
Datasheet download datasheet CPC3730C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BVDSX/ BVDGX 350V RDS(ON) (max) 30Ω IDSS (min) 140mA Package SOT-89 Features • Depletion mode device offers low RDS(ON) at cold temperatures • Low on resistance 30 ohms max. at 25ºC • High input impedance • High breakdown voltage 350V • Low VGS(off) voltage -1.6 to -3.9V • Small package size SOT-89 Applications • Ignition modules • Normally-on switches • Solid state relays • Converters • Telecommunications • Power supply Package Pinout G D S D (SOT-89) CPC3730C N-Channel Depletion-Mode Vertical DMOS FETs Description The CPC3730C is an N-channel depletion mode field effect transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. Third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.