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IXYS

CPC3909ZTR Datasheet Preview

CPC3909ZTR Datasheet

N-Channel MOSFET

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INTEGRATED CIRCUITS DIVISION
Parameter
Drain-to-Source Voltage - V(BR)DSX
Max On-Resistance - RDS(on)
Max Power
SOT-89 Package
SOT-223 Package
Rating
400
6
1.1
2.5
Units
V
W
Features
400V Drain-to-Source Voltage
Depletion Mode Device Offers Low RDS(on)
at Cold Temperatures
Low On-Resistance: 4.5(Typical) @ 25°C
Low VGS(off) Voltage
High Input Impedance
Low Input and Output Leakage
Small Package Size SOT-89 and SOT-223
PC Card (PCMCIA) Compatible
PCB Space and Cost Savings
Flammability Rating UL 94 V-0
Applications
LED Drive Circuits
Telecommunications
Normally On Switches
Ignition Modules
Converters
Security
Power Supplies
Regulators
Circuit Symbol
D
G
S
CPC3909
400V, 6N-Channel
Depletion-Mode FET
Description
The CPC3909 is an N-channel, depletion mode Field
Effect Transistor (FET) that is available in an
SOT-223 package (CPC3909Z) and an SOT-89
package (CPC3909C). Both utilize IXYS Integrated
Circuits Division’s proprietary vertical DMOS process
that realizes world class, high voltage MOSFET
performance in an economical silicon gate process.
The vertical DMOS process yields a highly reliable
device, particularly for use in difficult application
environments such as telecommunications, security,
and power supplies.
CPC3909Z and the CPC3909C have a typical
on-resistance of 4.5and a drain-to-source voltage
of 400V. As with all MOS devices, the FET structure
prevents thermal runaway and thermally induced
secondary breakdown.
Ordering Information
Part Number
CPC3909CTR
CPC3909ZTR
Description
SOT-89: Tape and Reel (1000/Reel)
SOT-223: Tape and Reel (1000/Reel)
Package Pinout:
D
4
123
GDS
Pin Number
1
2
3
4
Name
GATE
DRAIN
SOURCE
DRAIN
DS-CPC3909-R01
www.ixysic.com
1




IXYS

CPC3909ZTR Datasheet Preview

CPC3909ZTR Datasheet

N-Channel MOSFET

No Preview Available !

INTEGRATED CIRCUITS DIVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Ratings Units
Drain-to-Source Voltage (V(BR)DSX)
Gate-to-Source Voltage (VGS)
Total Package Dissipation 1
400
V
15
V
SOT-89
SOT-223
Operational Temperature
Storage Temperature
1.1
W
2.5
-40 to +110 oC
-40 to +125 oC
1 Mounted on 1"x1" FR4 board.
CPC3909
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to the
device. Functional operation of the device at conditions beyond
those indicated in the operational sections of this data sheet is
not implied.
Typical values are characteristic of the device at +25°C, and
are the result of engineering evaluations. They are provided for
information purposes only, and are not part of the manufacturing
testing requirements.
Electrical Characteristics @25oC (Unless Otherwise Specified)
Parameter
Gate-to-Source Off Voltage
Drain-to-Source Leakage Current
Drain Current
On-Resistance
Gate Leakage Current
Gate Capacitance
Symbol
VGS(off)
IDS(off)
ID
RDS(on)
IGSS
CISS
Conditions
Min
ID=1A, VDS=5V
-1.4
VGS= -5.5V, VDS=240V
-
VGS= -5.5V, VDS=400V
-
VGS= 0V, VDS=5V
300
VGS= 0V, IDS=300mA
-
VGS=15V
-
VDS= VGS=0V
-
Typ Max Units
-
-3.1
V
-
20
nA
-
1
A
-
-
mA
4.5
6
-
100
nA
-
275
pF
Thermal Impedance
Device
Parameter
SOT-89 (CPC3909C) Junction to Case
Junction to Ambient
SOT-223 (CPC3909Z) Junction to Case
Junction to Ambient
Symbol
JC
JA
JC
JA
Conditions
-
-
Min Typ Max Units
50
-
-
90
ºC/W
14
-
-
55
2
www.ixysic.com
R01


Part Number CPC3909ZTR
Description N-Channel MOSFET
Maker IXYS
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