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CPC3909 Datasheet N-channel MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - V(BR)DSX Max On-Resistance - RDS(on) Max Power SOT-89 Package SOT-223 Package Rating 400 6 1.1 2.

General Description

The CPC3909 is an N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3909Z) and an SOT-89 package (CPC3909C).

Both utilize IXYS Integrated Circuits Division’s proprietary vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process.

The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telemunications, security, and power supplies.

Key Features

  • 400V Drain-to-Source Voltage.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • Low On-Resistance: 4.5 (Typical) @ 25°C.
  • Low VGS(off) Voltage.
  • High Input Impedance.
  • Low Input and Output Leakage.
  • Small Package Size SOT-89 and SOT-223.
  • PC Card (PCMCIA) Compatible.
  • PCB Space and Cost Savings.
  • Flammability Rating UL 94 V-0.

CPC3909 Distributor