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CPC3960ZTR - N-Channel MOSFET

Download the CPC3960ZTR datasheet PDF. This datasheet also covers the CPC3960 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.

Key Features

  • High Breakdown Voltage: 600V.
  • On-Resistance: 44 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3960-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3960 N-Channel MOSFET
CPC3902 N-Channel MOSFET
CPC3902Z N-Channel MOSFET
CPC3902ZTR N-Channel MOSFET
CPC3909 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 600V RDS(on) (max) 44 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 600V • On-Resistance: 44 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Current Regulator • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3960 600V N-Channel Depletion-Mode FET Description The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture.