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CPC3960 Datasheet N-channel MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 600V RDS(on) (max) 44 IDSS (min) 100mA Package.

General Description

The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.

Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture.

As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown, which makes the CPC3960 ideal for use in high-power applications.

Key Features

  • High Breakdown Voltage: 600V.
  • On-Resistance: 44 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

CPC3960 Distributor