CPC3960ZTR
Description
The CPC3960 is a 600V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process. Yielding a robust device with high input impedance, this process enables world class, high voltage MOSFET performance with an economical silicon gate architecture.
Key Features
- High Breakdown Voltage: 600V
- On-Resistance: 44 max. at 25ºC
- Low VGS(off) Voltage: -1.4 to -3.1V
- High Input Impedance
- Small Package Size: SOT-223
