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CPC3980Z - N-Channel MOSFET

Download the CPC3980Z datasheet PDF. This datasheet also covers the CPC3980 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.

Key Features

  • High Breakdown Voltage: 800V.
  • Low On-Resistance: 45 max. at 25ºC.
  • Low VGS(off) Voltage: -1.4 to -3.1V.
  • High Input Impedance.
  • Small Package Size: SOT-223.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3980-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3980ZTR N-Channel MOSFET
CPC3980 N-Channel MOSFET
CPC3982 N-Channel MOSFET
CPC3982T N-Channel MOSFET
CPC3982TTR N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION BVDSX/ BVDGX 800V RDS(on) (max) 45 IDSS (min) 100mA Package SOT-223 Features • High Breakdown Voltage: 800V • Low On-Resistance: 45 max. at 25ºC • Low VGS(off) Voltage: -1.4 to -3.1V • High Input Impedance • Small Package Size: SOT-223 Applications • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply • Current Regulators Package Pinout D 4 123 GDS CPC3980 N-Channel Depletion-Mode Vertical DMOS FET Description The CPC3980 is an 800V, N-channel, depletion-mode, Field Effect Transistor (FET) created using IXYS Integrated Circuits Division’s proprietary vertical DMOS process.