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CPC3982TTR - N-Channel MOSFET

Download the CPC3982TTR datasheet PDF. This datasheet also covers the CPC3982 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits' proprietary third-generation vertical DMOS process.

The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.

Key Features

  • High Breakdown Voltage: 800V.
  • Low VGS(off) Voltage: -1.4V to -3.1V.
  • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures.
  • High Input Impedance.
  • Small Package Size: SOT-23.
  • Flammability Rating UL 94 V-0.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CPC3982-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
CPC3982T N-Channel MOSFET
CPC3982 N-Channel MOSFET
CPC3980 N-Channel MOSFET
CPC3980Z N-Channel MOSFET
CPC3980ZTR N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INTEGRATED CIRCUITS DIVISION V(BR)DSX / V(BR)DGX 800V RDS(on) (max) 380 IDSS (min) 20mA Package SOT-23 Features • High Breakdown Voltage: 800V • Low VGS(off) Voltage: -1.4V to -3.1V • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • High Input Impedance • Small Package Size: SOT-23 • Flammability Rating UL 94 V-0 Applications • Constant Current Regulator • Ignition Modules • Normally-On Switches • Solid State Relays • Converters • Telecommunications • Power Supply CPC3982 800V, 380 N-Channel Depletion-Mode FET Description The CPC3982 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits' proprietary third-generation vertical DMOS process.