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IXYS

IRFP250 Datasheet Preview

IRFP250 Datasheet

Power MOSFET

No Preview Available !

Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 250
VDSS
ID (cont)
RDS(on)
= 200 V
= 30 A
= 85 m
Symbol
Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IDM
I
AR
EAR
dv/dt
PD
T
J
TJM
T
stg
Md
Weight
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
200 V
200 V
±20 V
±30 V
30 A
120 A
30 A
19 mJ
5 V/ns
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
190 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
6g
300 °C
Features
l International standard package
JEDEC TO-247 AD
l Low RDS (on) HDMOSTM process
l Rugged polysilicon gate cell structure
l High commutating dv/dt rating
l Fast switching times
Symbol
VDSS
V
GS(th)
IGSS
IDSS
R
DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
V
DS
=
V,
GS
I
D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS
V =0V
GS
TJ = 25°C
T
J
=
125°C
V = 10 V, I = 18 A
GS D
Pulse test, t 300 µs, duty cycle d 2 %
200
2
V
4V
±100 nA
25 µA
250 µA
0.085
Applications
l Switch-mode and resonant-mode
power supplies
l Motor controls
l Uninterruptible Power Supplies (UPS)
l DC choppers
Advantages
l Easy to mount with 1 screw
(isolated mounting screw hole)
l Space savings
l High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92602E(5/96)
1-2




IXYS

IRFP250 Datasheet Preview

IRFP250 Datasheet

Power MOSFET

No Preview Available !

IRFP 250
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 18 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
12
2970
530
180
S
pF
pF
pF
VGS = 10 V, VDS = 100 V, ID = 30 A
RG = 6.2 Ω, (External)
29 ns
130 ns
110 ns
98 ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
106 140
24 40
43 74
nC
nC
nC
0.65 K/W
0.24 K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS VGS = 0 V
ISM Repetitive; pulse width limited by TJM
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V
30 A
120 A
1.8 V
360 ns
TO-247 AD Outline
123
Terminals: 1 - Gate
2 - Drain
3 - Source Tab - Drain
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 2.2 2.54
1
A 2.2 2.6
2
b 1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1 4.50
P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2


Part Number IRFP250
Description Power MOSFET
Maker IXYS
Total Page 2 Pages
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