IXFH12N80P
IXFH12N80P is Power MOSFET manufactured by IXYS.
Features
D (TAB)
D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BV DSS
V GS
=
V,
=
μA
VGS(th)
VDS = VGS, ID = 2.5 m A
Characteristic Values Min. Typ. Max.
800 V
3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance
- easy to drive and to protect
IGSS I
RDS(on)
VGS = ±30 V, VDS = 0 V
V =V DS DSS
V =0V GS
=
125°C
VGS = 10 V, ID = 0.5 ID25 , Note 1
±100 n A
25 μA Advantages
250 μA z Easy to mount
Ω z Space savings z High power density
© 2006 IXYS All rights reserved
DS99476E(07/06)
IXFH12N80P IXFQ12N80P IXFV12N80P...
