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IXFH12N80P Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

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Overview

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V ID25 = 12 A ≤RDS(on) 0.85 Ω trr ≤ 250 ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSS VDGR V GS VGSM ID25 IDM IAR E AR EAS T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C 800 V 800 V TO-3P (IXFQ) ±30 V ±40 V 12 A 36 A 6A G DS 30 mJ PLUS220 (IXFV) 0.8 J D (TAB) D (TAB) dv/dt PD T J TJM Tstg TL TSOLD Md FC Weight IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, T J ≤ 150°C, R G = 5 Ω TC = 25°C 10 360 -55 ...

+150 150 -55 ...

+150 V/ns W GDS D (TAB) °C °C PLUS220 SMD (IXFV...S) °C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-247, TO-3P) 300 °C 260 °C 1.13/10 Nm/lb.in.

Key Features

  • D (TAB) D = Drain TAB = Drain Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 μA VGS(th) VDS = VGS, ID = 2.5 mA Characteristic Values Min. Typ. Max. 800 V 3.0 5.5 V z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect IGSS I DSS RDS(on) VGS = ±30 V, VDS = 0 V V =V DS DSS V =0V GS T J = 125°C VGS = 10 V, ID = 0.5 ID25 , Note 1 ±100 nA 25 μA Advanta.

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