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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS
VDSS = 800 V
ID25 = 12 A ≤RDS(on) 0.85 Ω
trr ≤ 250 ns
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
V DSS
VDGR
V GS
VGSM
ID25 IDM IAR E
AR
EAS
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Tranisent
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
T C
= 25°C
TC = 25°C
800 V
800 V TO-3P (IXFQ)
±30 V
±40 V
12 A
36 A 6A
G DS
30 mJ PLUS220 (IXFV)
0.8 J
D (TAB) D (TAB)
dv/dt
PD T
J
TJM Tstg
TL TSOLD Md FC Weight
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,
T J
≤
150°C,
R G
=
5
Ω
TC = 25°C
10
360 -55 ... +150
150 -55 ... +150
V/ns
W
GDS
D (TAB)
°C °C PLUS220 SMD (IXFV...S)
°C
1.6 mm (0.062 in.
IXFH12N80P Datasheet
