IXFH26N60 Description
+150 300 300 W °C °C °C °C 1.13/10 6 0.9/6 Nm/lb.in. 10 g TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S TO-264 AA (IXFK) (TAB) (TAB) G D S D (TAB) G = Gate S = Source TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
IXFH26N60 Key Features
- International standard packages
- EpoxymeetUL94V-0, flammability
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Avalanche energy and current rated
- Fast intrinsic Rectifier
- Easy to mount
- Space savings
- High power density
- ID25, pulse test VGS = 0 V, VDS = 25 V, f = 1 MHz