Datasheet Summary
Advance AdvanceTechnical TechnicalInformation Information
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PolarHVTM Power MOSFET
N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS
VDSS ID25
= = RDS(on) ≤ ≤ trr
TO-247 (IXFH)
600 V 26 A 270 mΩ 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 5 Ω TC = 25°C
Maximum Ratings 600 600 ± 30 ± 40 26 65 26 40 1.2 10 V V V V A A A mJ J...
