Datasheet Summary
HiPerFETTM Power MOSFETs
IXFH 26N60/IXFT 26N60 IXFK 28N60
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t rr
Preliminary data
V DSS
D25
600 V 26 A
600 V 28 A trr £ 250 ns
R DS(on)
0.25 W 0.25 W
Symbol
VDSS VDGR V
VGSM I
D25
EAR EAS dv/dt
TJ TJM Tstg TL
Md Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous
Transient
= 25°C, Chip capability
=
25°C, pulse width limited by
T JM
= 25°C
TC = 25°C TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
= 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque
Maximum Ratings IXFH/ IXFT...
