• Part: IXFH30N40Q
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 126.21 KB
Download IXFH30N40Q Datasheet PDF
IXYS
IXFH30N40Q
Features l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 400 2.0 4.0 ± 100 TJ = 25°C TJ = 125°C 25 1 0.16 V V n A m A m A W l l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250 m A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V l IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % Easy to mount Space savings High power density © 2000 IXYS All rights reserved 98754 (10/00) IXFH 30N40Q IXFT 30N40Q .. Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 18 25 3300 VGS = 0 V, VDS = 25 V, f = 1 MHz 540 150 25 VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2.0 W...