• Part: IXFH32N50Q
  • Description: Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 589.40 KB
Download IXFH32N50Q Datasheet PDF
IXYS
IXFH32N50Q
Features z z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 1 0.16 V z z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 u A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 z V n A µA m A Ω IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages z z z Easy to mount Space savings High power density © 2004 IXYS All rights reserved DS98596E(02/04) IXFH 32N50Q IXFT 32N50Q .. Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 18 28 3950 4925 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 - VDSS, ID = 0.5 - ID25 RG = 2 Ω (External), 42 75 20 153 VGS = 10 V, VDS = 0.5 -...