Download the IXFH32N50Q datasheet PDF.
This datasheet also covers the IXFT32N50Q variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
z z
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ±100 TJ = 25°C TJ = 125°C 100 1 0.16 V
z z z
VDSS VGS(th) IGSS IDSS RDS(on)
VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
z
V nA µA mA Ω
IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive.
Full PDF Text Transcription for IXFH32N50Q (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFH32N50Q. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q VDSS ID25 RDS(on) 500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω trr ≤ 250 ns N-Channel Enhancement Mode...
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32 A 0.16 Ω 500 V 32 A 0.16 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C; pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 500 500 ±20 ±30 32 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in. g g TO-247 AD (IXFH) (TAB) TO-268 (D3) ( IXFT) G S (TAB) G = Gate S = Source D
IXFH32N50Q Datasheet
