Overview: Preliminary Data Sheet
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800V 8A IXFH9N80 800V 9A 1.1Ω 250 ns 0.9Ω 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25
IDM
IAR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C 8N80 9N80 8N80 9N80 8N80 9N80 800
800
±20
±30
8 9 32 36 8 9 V
V
V
V
A A A A A A EAR dv/dt
PD TJ TJM Tstg Md Weight TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque 18 mJ 5 V/ns 180 W -55 ... +150 150
-55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s 300 °C Symbol
VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified)
min. typ. max. VGS = 0 V, ID = 3 mA VDSS temperature coefficient
VDS = VGS, ID = 2.5 mA VGS(th) temperature coefficient VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle δ ≤ 2% 800 0.088
2 -0.257 V %/K
4.5 V %/K ±100 nA 250 µA 1 mA 8N80 9N80 1.1 Ω 0.
