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HiPerFETTM Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt
IXFH 9N80Q IXFT 9N80Q
VDSS I
D25
RDS(on)
= 800 V = 9A = 1.1 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM I
D25
I
DM
IAR EAR EAS dv/dt
PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
V GS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T C
= 25°C
T C
= 25°C,
pulse width limited by TJM
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V DD
≤
V, DSS
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque TO-247 TO-268
Maximum Ratings
800 V 800 V ±20 V ±30 V
9A 36 A
9A 20 mJ 700 mJ
5 V/ns
180 -55 ... +150
150 -55 ... +150
300
1.13/10 6 4
W
°C °C °C °C
Nm/lb.in.
IXFH9N80Q Datasheet
