Download the IXFH96N20P datasheet PDF.
This datasheet also covers the IXFV96N20PS variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
(TAB)
D (TAB)
D (TAB) D = Drain TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values Min. Typ. Max. 200
V
VGS(th)
VDS = VGS, ID = 4 mA
2.5
5.0 V
I
GSS
V GS
=
±20
V, DC
V DS
=
0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150° C
25 µA 250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
24 m Ω
l Fast Intrinsic Diode l International standard packages l Unclamped Inducti.
Full PDF Text Transcription for IXFH96N20P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFH96N20P. For precise diagrams, and layout, please refer to the original PDF.
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 96N20P IXFT 96N20P IXFV 96N20P V DSS ID25 RDS(on) trr = 200 V = 96 A ...
View more extracted text
96N20P IXFT 96N20P IXFV 96N20P V DSS ID25 RDS(on) trr = 200 V = 96 A ≤ 24 mΩ ≤ 200 ns Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Mounting torque (TO-247) TO-220 TO-247 TO-268 200 V 200 V ±20 V ±30 V 96 A G DS 75 A 225
IXFH96N20P Datasheet
