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PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFH 96N20P IXFT 96N20P IXFV 96N20P
V DSS
ID25
RDS(on)
trr
= 200 V = 96 A ≤ 24 mΩ ≤ 200 ns
Symbol
Test Conditions
Maximum Ratings TO-247 (IXFH)
VDSS VDGR VGS VGSM
ID25 ID(RMS) IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md
Weight
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient
TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Mounting torque (TO-247)
TO-220 TO-247 TO-268
200
V
200
V
±20
V
±30
V
96
A
G DS
75
A
225
A TO-268 (IXFT)
60
A
50
mJ
1.
IXFH96N20P Datasheet
