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IXFH9N80 - Power MOSFETs

Download the IXFH9N80 datasheet PDF. This datasheet also covers the IXFH8N80 variant, as both devices belong to the same power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH8N80-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFH9N80 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFH9N80. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Data Sheet HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) trr IXFH8N80 800V 8A IXFH9N80 800V 9A 1.1...

View more extracted text
STM Family VDSS ID25 RDS(on) trr IXFH8N80 800V 8A IXFH9N80 800V 9A 1.1Ω 250 ns 0.9Ω 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM ID25 IDM IAR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C 8N80 9N80 8N80 9N80 8N80 9N80 800 800 ±20 ±30 8 9 32 36 8 9 V V V V A A A A A A EAR dv/dt PD TJ TJM Tstg Md Weight TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque 18 mJ 5 V/ns 180 W -55 ... +150 150 -55 ... +150 °C °C °C 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g Maximu

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