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IXFK160N30T Datasheet GigaMOS Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Download the IXFK160N30T datasheet PDF. This datasheet also includes the IXFX160N30T variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IXFX160N30T_IXYS.pdf) that lists specifications for multiple related part numbers.

Overview

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30T IXFX160N30T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 300V 160A 19mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 300 300 ± 20 ± 30 160 440 40 3 20 1390 -55 ...

+150 150 -55 ...

+150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in.

Key Features

  • z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ± 200 V V nA z z Easy to Mount Space Savings High Power Density.

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