IXFK120N20 Description
+150 °C 300 °C 0.9/6 Nm/b.in. 6g 10 g PLUS 247TM (IXFX) G D TO-264 AA (IXFK) (TAB) G D S G = Gate S = Source (TAB) D = Drain TAB = Drain.
IXFK120N20 Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS)
- Low package inductance
- easy to drive and to protect
- Fast intrinsic rectifier