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IXFK120N20 - Power MOSFET

Download the IXFK120N20 datasheet PDF. This datasheet also covers the IXFX120N20 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International standard packages.
  • Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX120N20-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFK120N20P Power MOSFET IXYS Corporation
IXFK100N10 Power MOSFET IXYS Corporation
IXFK100N25 Power MOSFET IXYS Corporation
IXFK102N30P Polar MOSFETs IXYS Corporation
IXFK105N07 HiPerFET Power MOSFETs IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK120N25 HiPerFET Power MOSFETs
IXFK120N25P Power MOSFET
IXFK120N30T GigaMOS Power MOSFET
IXFK120N30T GigaMOS Power MOSFET
IXFK120N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerFETTM Power MOSFETs Single MOSFET Die Preliminary data sheet IXFX 120N20 IXFK 120N20 V= DSS ID25 = = RDS(on) 200 V 120 A 17 mΩ trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ T JM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C (MOSFET chip capability) TC = 104°C (External lead capability) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS T J ≤ 150°C, R G = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Maximum Ratings 200 V 200 V ±20 V ±30 V 120 A 76 A 480 A 120 A 64 mJ 3 J 15 V/ns 560 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 0.